- 您现在的位置：买卖IC网 > Sheet目录345 > MT48H32M16LFB4-75B IT:C (Micron Technology Inc)IC SDRAM 512MB 54VFBGA
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
WRITE Operation
Figure 34: WRITE – DQM Operation
CLK
T0
tCKS
tCKH
tCK
T1
tCL
T2
tCH
T3
T4
T5
T6
T7
CKE
tCMS
tCMH
Command
ACTIVE
NOP
WRITE
NOP
NOP
NOP
NOP
NOP
tCMS tCMH
DQM
tA S
tAH
Address
Row
Column m
tA S
tAH
Enable auto precharge
A10
Row
tA S
tAH
Disable auto precharge
BA0, BA1
Bank
Bank
t DS
tDH
tD S
tDH
t DS
tDH
DQ
D IN m
D IN m + 2
D IN m + 3
tRCD
Note:
1. For this example, BL = 4.
Don’t Care
Burst Read/Single Write
The burst read/single write mode is entered by programming the write burst mode bit
(M9) in the mode register to a 1. In this mode, all WRITE commands result in the access
of a single column location (burst of one), regardless of the programmed burst length.
READ commands access columns according to the programmed burst length and se-
quence, just as in the normal mode of operation (M9 = 0).
PDF: 09005aef8459c827
512mb_mobile_sdram_y67m_at.pdf – Rev. B 3/11 EN
63
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2011 Micron Technology, Inc. All rights reserved.
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MT48H8M16LFB4-75 IT:K TR
IC SDRAM 128MBIT 133MHZ 54VFBGA
MTC100-JA2-P34
CONTACT INSERT PIN
MX841BE
IC CONVERTER WHITE LED 8-SOIC
MXHV9910BTR
IC LED DRIVER HIGH BRIGHT 8-SOIC
MXN12FB12F
MOTOR BRUSHED DC 12V 2922RPM
MXN13FB08B1
MOTOR BRUSHED DC 8V 4714RPM
N01L63W2AB25I
IC SRAM ASYNC 1MBIT ULP 48-BGA
N01L63W3AB25I
IC SRAM 1MBIT 3V LP 48-BGA
相关代理商/技术参数